Flash memory is an electronic (solid-state) non-volatile computer storage medium that can be electrically erased and reprogrammed.
Toshiba developed flash memory from EEPROM (electrically erasable programmable read-only memory) in the early 1980s and introduced it to the market in 1984. The two main types of flash memory are named after the NAND and NOR logic gates. The individual flash memory cells exhibit internal characteristics similar to those of the corresponding gates.
While EPROMs had to be completely erased before being rewritten, NAND-type flash memory may be written and read in blocks (or pages) which are generally much smaller than the entire device. NOR-type flash allows a single machine word (byte) to be written – to an erased location – or read independently.
The NAND type is found primarily in memory cards, USB flash drives, solid-state drives (those produced in 2009 or later), and similar products, for general storage and transfer of data. NAND or NOR flash memory is also often used to store configuration data in numerous digital products, a task previously made possible by EEPROM or battery-powered static RAM. One key disadvantage of flash memory is that it can only endure a relatively small number of write cycles in a specific block.